NCE6802 Todos los transistores

 

NCE6802 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6802
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23-6L

 Búsqueda de reemplazo de MOSFET NCE6802

 

Principales características: NCE6802

 ..1. Size:326K  ncepower
 nce6802.pdf pdf_icon

NCE6802

http //www.ncepower.com NCE6802 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

 9.1. Size:420K  ncepower
 nce6890k.pdf pdf_icon

NCE6802

http //www.ncepower.com NCE6890K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 9.2. Size:321K  ncepower
 nce6890d.pdf pdf_icon

NCE6802

Pb Free Product http //www.ncepower.com NCE6890D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.3. Size:338K  ncepower
 nce6890.pdf pdf_icon

NCE6802

NCE6890 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE65TF130F , NCE65TF180D , NCE65TF180 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , AON7408 , NCE6890 , NCE6890K , NCE6990 , NCE6990D , NCE70T180D , NCE70T180 , NCE70T180F , NCE70T1K2K .

 

 
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