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NCE6802 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6802

Código: 6802

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.2 W

Tensión drenaje-fuente |Vds|: 30 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.2 V

Carga de compuerta (Qg): 4 nC

Tiempo de elevación (tr): 1.5 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 0.045 Ohm

Empaquetado / Estuche: SOT23-6L

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NCE6802 Datasheet (PDF)

..1. nce6802.pdf Size:326K _ncepower

NCE6802
NCE6802

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

9.1. nce6890.pdf Size:338K _ncepower

NCE6802
NCE6802

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

9.2. nce6890k.pdf Size:420K _ncepower

NCE6802
NCE6802

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

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