NCE6802 - аналоги и даташиты транзистора

 

NCE6802 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE6802
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 1.5 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SOT23-6L
 

 Аналог (замена) для NCE6802

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6802 Datasheet (PDF)

 ..1. Size:326K  ncepower
 nce6802.pdf pdf_icon

NCE6802

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

 9.1. Size:420K  ncepower
 nce6890k.pdf pdf_icon

NCE6802

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 9.2. Size:321K  ncepower
 nce6890d.pdf pdf_icon

NCE6802

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.3. Size:338K  ncepower
 nce6890.pdf pdf_icon

NCE6802

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE65TF130F , NCE65TF180D , NCE65TF180 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , 2N7000 , NCE6890 , NCE6890K , NCE6990 , NCE6990D , NCE70T180D , NCE70T180 , NCE70T180F , NCE70T1K2K .

 

 
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