Справочник MOSFET. NCE6802

 

NCE6802 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6802
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.5 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SOT23-6L
     - подбор MOSFET транзистора по параметрам

 

NCE6802 Datasheet (PDF)

 ..1. Size:326K  ncepower
nce6802.pdfpdf_icon

NCE6802

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

 9.1. Size:420K  ncepower
nce6890k.pdfpdf_icon

NCE6802

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 9.2. Size:321K  ncepower
nce6890d.pdfpdf_icon

NCE6802

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.3. Size:338K  ncepower
nce6890.pdfpdf_icon

NCE6802

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPA60R299CP | STB10NK60ZT4 | SSF65R420S2 | BUK455-100B | SI7413DN | FDG6320C | NCEAP016N10LL

 

 
Back to Top

 


 
.