NCE6802 - описание и поиск аналогов

 

NCE6802. Аналоги и основные параметры

Наименование производителя: NCE6802

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.5 ns

Cossⓘ - Выходная емкость: 35 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: SOT23-6L

Аналог (замена) для NCE6802

- подборⓘ MOSFET транзистора по параметрам

 

NCE6802 даташит

 ..1. Size:326K  ncepower
nce6802.pdfpdf_icon

NCE6802

http //www.ncepower.com NCE6802 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

 9.1. Size:420K  ncepower
nce6890k.pdfpdf_icon

NCE6802

http //www.ncepower.com NCE6890K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 9.2. Size:321K  ncepower
nce6890d.pdfpdf_icon

NCE6802

Pb Free Product http //www.ncepower.com NCE6890D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.3. Size:338K  ncepower
nce6890.pdfpdf_icon

NCE6802

NCE6890 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

Другие MOSFET... NCE65TF130F , NCE65TF180D , NCE65TF180 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , AON7408 , NCE6890 , NCE6890K , NCE6990 , NCE6990D , NCE70T180D , NCE70T180 , NCE70T180F , NCE70T1K2K .

 

 

 

 

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