NCE6802 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE6802
Marking Code: 6802
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 3.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 4 nC
Rise Time (tr): 1.5 nS
Drain-Source Capacitance (Cd): 35 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: SOT23-6L
NCE6802 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE6802 Datasheet (PDF)
..1. nce6802.pdf 
Size:326K _ncepower
http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)
9.1. nce6890.pdf Size:338K _ncepower
NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)
9.2. nce6890k.pdf Size:420K _ncepower
http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)
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