NCE82H110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE82H110
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 120 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 334 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220

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NCE82H110 Datasheet (PDF)

..1. Size:328K ncepower
nce82h110.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

0.1. Size:369K ncepower
nce82h110d.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

7.1. Size:627K ncepower
nce82h140.pdf

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR

7.2. Size:381K ncepower
nce82h140ll.pdf

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

7.3. Size:304K ncepower
nce82h160d.pdf

NCE82H160Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

7.4. Size:364K ncepower
nce82h140d.pdf

http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)

7.5. Size:318K ncepower
nce82h160.pdf

http://www.ncepower.com NCE82H160NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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