NCE82H110 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE82H110
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 82 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 334 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE82H110
NCE82H110 Datasheet (PDF)
nce82h110.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h110d.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h140.pdf

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR
nce82h140ll.pdf

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
Другие MOSFET... NCE8205 , NCE8205A , NCE8205I , NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , RU7088R , NCE82H110D , NCE82H140D , NCE85H21 , NCE85H21C , NCE8804 , NCE9435 , NCE9926 , NCEP0112AS .
History: HFP2N70S | OSG65R380IF | 2SK2924 | LND150N3 | IRFBC40PBF | STF150N10F7 | IPSA70R1K4CE
History: HFP2N70S | OSG65R380IF | 2SK2924 | LND150N3 | IRFBC40PBF | STF150N10F7 | IPSA70R1K4CE



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