NCE82H110 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE82H110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 82 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 39 nS
Drain-Source Capacitance (Cd): 334 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220
NCE82H110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE82H110 Datasheet (PDF)
nce82h110.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h110d.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h140d.pdf
http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)
nce8295ak.pdf
Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)
nce8290ac.pdf
http://www.ncepower.com NCE8290ACNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)
nce8205t.pdf
Pb Free Producthttp://www.ncepower.com NCE8205tNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen
nce8205a.pdf
Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener
nce8295a.pdf
Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)
nce8205.pdf
Pb Free Producthttp://www.ncepower.com NCE8205NCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener
nce8295ad.pdf
Pb Free Producthttp://www.ncepower.com NCE8295ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram VDS =82V,ID =95A RDS(ON)
nce8205i.pdf
Pb Free Producthttp://www.ncepower.com NCE8205iNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205i uses advanced trench technology to provide D1D2excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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