FDD18N20LZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD18N20LZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de FDD18N20LZ MOSFET
FDD18N20LZ datasheet
fdd18n20lz.pdf
December 2013 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m Features Description R DS(on) = 125 m (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to Low CRSS (Typ. 25 pF)
fdd18n20lz.pdf
MOSFET N-Channel, UniFETt 200 V, 16 A, 125 mW FDD18N20LZ Description www.onsemi.com UniFET MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET D is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This G device family is suitable for switching po
fdd18n20lz.pdf
FDD18N20LZ www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI
Otros transistores... FDD10N20LZ , STU10L01 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0F085 , FDD14AN06LA0F085 , FDD16AN08A0 , FDD16AN08A0F085 , CS150N03A8 , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , FDD2670 , STU09N25 .
History: 5N65C
History: 5N65C
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