December 2013FDD18N20LZN-Channel UniFETTM MOSFET 200 V, 16 A, 125 mFeatures Description R DS(on) = 125 m (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 30 nC)This MOSFET is tailored to reduce on-state resistance, and to Low CRSS (Typ. 25 pF)

MOSFET N-Channel,UniFETt200 V, 16 A, 125 mWFDD18N20LZDescriptionwww.onsemi.comUniFET MOSFET is ON Semiconductors high voltage MOSFETfamily based on planar stripe and DMOS technology. This MOSFETDis tailored to reduce on-state resistance, and to provide betterswitching performance and higher avalanche energy strength. ThisGdevice family is suitable for switching po

FDD18N20LZwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI