FDD18N20LZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD18N20LZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 9.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO252 DPAK
FDD18N20LZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD18N20LZ Datasheet (PDF)
fdd18n20lz.pdf
December 2013FDD18N20LZN-Channel UniFETTM MOSFET 200 V, 16 A, 125 mFeatures Description R DS(on) = 125 m (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 30 nC)This MOSFET is tailored to reduce on-state resistance, and to Low CRSS (Typ. 25 pF)
fdd18n20lz.pdf
MOSFET N-Channel,UniFETt200 V, 16 A, 125 mWFDD18N20LZDescriptionwww.onsemi.comUniFET MOSFET is ON Semiconductors high voltage MOSFETfamily based on planar stripe and DMOS technology. This MOSFETDis tailored to reduce on-state resistance, and to provide betterswitching performance and higher avalanche energy strength. ThisGdevice family is suitable for switching po
fdd18n20lz.pdf
FDD18N20LZwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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