All MOSFET. FDD18N20LZ Datasheet

 

FDD18N20LZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD18N20LZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 9.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO252, DPAK

FDD18N20LZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD18N20LZ Datasheet (PDF)

0.1. fdd18n20lz.pdf Size:1212K _fairchild_semi

FDD18N20LZ
FDD18N20LZ

December 2013 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low CRSS (Typ. 25 pF)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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