FDD18N20LZ Datasheet. Specs and Replacement

Type Designator: FDD18N20LZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO252 DPAK

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FDD18N20LZ datasheet

 ..1. Size:1212K  fairchild semi
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FDD18N20LZ

December 2013 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m Features Description R DS(on) = 125 m (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to Low CRSS (Typ. 25 pF)... See More ⇒

 ..2. Size:417K  onsemi
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FDD18N20LZ

MOSFET N-Channel, UniFETt 200 V, 16 A, 125 mW FDD18N20LZ Description www.onsemi.com UniFET MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET D is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This G device family is suitable for switching po... See More ⇒

 ..3. Size:1699K  cn vbsemi
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FDD18N20LZ

FDD18N20LZ www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: FDD10N20LZ, STU10L01, FDD120AN15A0, FDD13AN06A0, FDD13AN06A0F085, FDD14AN06LA0F085, FDD16AN08A0, FDD16AN08A0F085, 4435, STU102S, FDD20AN06A0F085, FDD24AN06LA0F085, FDD2572, FDD2572F085, FDD2582, FDD2670, STU09N25

Keywords - FDD18N20LZ MOSFET specs

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