FDD18N20LZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD18N20LZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 9.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO252, DPAK
FDD18N20LZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD18N20LZ Datasheet (PDF)
0.1. fdd18n20lz.pdf 
Size:1212K _fairchild_semi
December 2013 FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low CRSS (Typ. 25 pF)
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