NCEP01T18T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP01T18T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 180 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 158 nC
   Tiempo de subida (tr): 75 nS
   Conductancia de drenaje-sustrato (Cd): 2480 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO247

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NCEP01T18T Datasheet (PDF)

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ncep01t18t.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

5.1. Size:323K ncepower
ncep01t18d.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

5.2. Size:345K ncepower
ncep01t18.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

5.3. Size:396K ncepower
ncep01t18vd.pdf

http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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