Справочник MOSFET. NCEP01T18T

 

NCEP01T18T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP01T18T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 2480 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для NCEP01T18T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP01T18T Datasheet (PDF)

 ..1. Size:323K  ncepower
 ncep01t18t.pdf pdf_icon

NCEP01T18T

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:323K  ncepower
 ncep01t18d.pdf pdf_icon

NCEP01T18T

Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:345K  ncepower
 ncep01t18.pdf pdf_icon

NCEP01T18T

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.3. Size:396K  ncepower
 ncep01t18vd.pdf pdf_icon

NCEP01T18T

http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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History: NDH8302P | RUM001L02 | IPW60R080P7 | NCE60NF420I | TPC8014 | FDWS9520L-F085 | HYG065N15NS1B

 

 
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