NCEP01T18T - описание и поиск аналогов

 

NCEP01T18T. Аналоги и основные параметры

Наименование производителя: NCEP01T18T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 75 ns

Cossⓘ - Выходная емкость: 2480 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm

Тип корпуса: TO247

Аналог (замена) для NCEP01T18T

- подборⓘ MOSFET транзистора по параметрам

 

NCEP01T18T даташит

 ..1. Size:323K  ncepower
 ncep01t18t.pdf pdf_icon

NCEP01T18T

Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:323K  ncepower
 ncep01t18d.pdf pdf_icon

NCEP01T18T

Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:345K  ncepower
 ncep01t18.pdf pdf_icon

NCEP01T18T

Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.3. Size:396K  ncepower
 ncep01t18vd.pdf pdf_icon

NCEP01T18T

http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP01T11 , NCEP01T12 , NCEP01T13 , NCEP01T13A , NCEP01T13AD , NCEP01T13D , NCEP01T15 , NCEP01T18 , IRFB4110 , NCEP020N30GU , NCEP023N10 , NCEP023N10D , NCEP023N10LL , NCEP023N85 , NCEP023N85D , NCEP02515K , NCEP02525F .

History: NCEP020N30GU | AON6530

 

 

 

 

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