NCEP01T18T MOSFET Datasheet: N-Ch, 100V, 180A. Full specification with pinout and replacement list

NCEP01T18T Specs and Replacement

Type Designator: NCEP01T18T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 2480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO247

NCEP01T18T substitution

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NCEP01T18T datasheet

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Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

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Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒

5.2. Size:345K ncepower
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Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒

5.3. Size:396K ncepower
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http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

Detailed specifications: NCEP01T11, NCEP01T12, NCEP01T13, NCEP01T13A, NCEP01T13AD, NCEP01T13D, NCEP01T15, NCEP01T18, IRFB4110, NCEP020N30GU, NCEP023N10, NCEP023N10D, NCEP023N10LL, NCEP023N85, NCEP023N85D, NCEP02515K, NCEP02525F