NCEP3090GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP3090GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 34.8 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 773 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEP3090GU Datasheet (PDF)

..1. Size:330K ncepower
ncep3090gu.pdf

Pb Free Producthttp://www.ncepower.com NCEP3090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.1. Size:372K ncepower
ncep3085eg.pdf

Pb Free Producthttp://www.ncepower.com NCEP3085EGNCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.2. Size:602K ncepower
ncep30p90k.pdf

http://www.ncepower.com NCEP30P90KNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP30P90K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

8.3. Size:506K ncepower
ncep3065qu.pdf

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

8.4. Size:1031K ncepower
ncep30t17gu.pdf

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

8.5. Size:366K ncepower
ncep30t17g.pdf

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

8.6. Size:332K ncepower
ncep3060eq.pdf

Pb Free Producthttp://www.ncepower.com NCEP3060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.7. Size:725K ncepower
ncep30t21gu.pdf

http://www.ncepower.com NCEP30T21GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T21GU uses Super Trench technology that isV =30V,I =210ADS Duniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5VDS(ON) GSswitching power lo

8.8. Size:324K ncepower
ncep3045bgu.pdf

http://www.ncepower.com NCEP3045BGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los

8.9. Size:325K ncepower
ncep30pt16g.pdf

http://www.ncepower.com NCEP30PT16GNCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse

8.10. Size:783K ncepower
ncep30t22gu.pdf

http://www.ncepower.com NCEP30T22GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T22GU uses Super Trench technology that isV =30V,I =220ADS Duniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching power lo

8.11. Size:361K ncepower
ncep30t19g.pdf

Pb Free Producthttp://www.ncepower.com NCEP30T19GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

8.12. Size:366K ncepower
ncep30t12g.pdf

Pb Free Producthttp://www.ncepower.com NCEP30T12GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

8.13. Size:332K ncepower
ncep30p90g.pdf

http://www.ncepower.com NCEP30P90GNCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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ncep3065bqu.pdf

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

8.15. Size:347K ncepower
ncep3045gu.pdf

Pb Free Producthttp://www.ncepower.com NCEP3045GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

8.16. Size:352K ncepower
ncep30t15gu.pdf

http://www.ncepower.com NCEP30T15GUNCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

8.17. Size:469K ncepower
ncep30t13gu.pdf

http://www.ncepower.com NCEP30T13GUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss

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ncep3040q.pdf

http://www.ncepower.com NCEP3040QNCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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