NCEP3090GU Specs and Replacement
Type Designator: NCEP3090GU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ -
Output Capacitance: 773 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: DFN5X6-8L
- MOSFET ⓘ Cross-Reference Search
NCEP3090GU datasheet
..1. Size:330K ncepower
ncep3090gu.pdf 
Pb Free Product http //www.ncepower.com NCEP3090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.1. Size:372K ncepower
ncep3085eg.pdf
Pb Free Product http //www.ncepower.com NCEP3085EG NCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.2. Size:602K ncepower
ncep30p90k.pdf
http //www.ncepower.com NCEP30P90K NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi... See More ⇒
8.3. Size:506K ncepower
ncep3065qu.pdf
http //www.ncepower.com NCEP3065QU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi... See More ⇒
8.4. Size:1031K ncepower
ncep30t17gu.pdf
Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig... See More ⇒
8.5. Size:366K ncepower
ncep30t17g.pdf
Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.6. Size:332K ncepower
ncep3060eq.pdf
Pb Free Product http //www.ncepower.com NCEP3060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.7. Size:725K ncepower
ncep30t21gu.pdf
http //www.ncepower.com NCEP30T21GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T21GU uses Super Trench technology that is V =30V,I =210A DS D uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5V DS(ON) GS switching power lo... See More ⇒
8.8. Size:324K ncepower
ncep3045bgu.pdf
http //www.ncepower.com NCEP3045BGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los... See More ⇒
8.9. Size:325K ncepower
ncep30pt16g.pdf
http //www.ncepower.com NCEP30PT16G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse... See More ⇒
8.10. Size:783K ncepower
ncep30t22gu.pdf
http //www.ncepower.com NCEP30T22GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T22GU uses Super Trench technology that is V =30V,I =220A DS D uniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5V DS(ON) GS switching power lo... See More ⇒
8.11. Size:361K ncepower
ncep30t19g.pdf
Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.12. Size:366K ncepower
ncep30t12g.pdf
Pb Free Product http //www.ncepower.com NCEP30T12G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.13. Size:332K ncepower
ncep30p90g.pdf
http //www.ncepower.com NCEP30P90G NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
8.14. Size:510K ncepower
ncep3065bqu.pdf
http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒
8.15. Size:347K ncepower
ncep3045gu.pdf
Pb Free Product http //www.ncepower.com NCEP3045GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.16. Size:352K ncepower
ncep30t15gu.pdf
http //www.ncepower.com NCEP30T15GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
8.17. Size:469K ncepower
ncep30t13gu.pdf
http //www.ncepower.com NCEP30T13GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss... See More ⇒
8.18. Size:325K ncepower
ncep3040q.pdf
http //www.ncepower.com NCEP3040Q NCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒
Detailed specifications: NCEP1545K, NCEP1570, NCEP1570D, NCEP1580, NCEP15T14, NCEP15T14D, NCEP25N10AK, NCEP3040Q, 10N65, NCEP30T12G, NCEP30T13GU, NCEP4040Q, NCEP4065QU, NCEP40P80D, NCEP40P80K, NCEP40PT15D, NCEP40T11G
Keywords - NCEP3090GU MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
