Справочник MOSFET. NCEP3090GU

 

NCEP3090GU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP3090GU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 34.8 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 773 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: DFN5X6-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP3090GU Datasheet (PDF)

 ..1. Size:330K  ncepower
ncep3090gu.pdfpdf_icon

NCEP3090GU

Pb Free Producthttp://www.ncepower.com NCEP3090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.1. Size:372K  ncepower
ncep3085eg.pdfpdf_icon

NCEP3090GU

Pb Free Producthttp://www.ncepower.com NCEP3085EGNCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.2. Size:602K  ncepower
ncep30p90k.pdfpdf_icon

NCEP3090GU

http://www.ncepower.com NCEP30P90KNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP30P90K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 8.3. Size:506K  ncepower
ncep3065qu.pdfpdf_icon

NCEP3090GU

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

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History: HFU5N50U | NCEP30PT16G | HFI640 | SP8M51

 

 
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