NCEP40PT15D Todos los transistores

http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS

http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON

http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40PT12K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120A DS D uniquely optimized to provide the most efficient high frequency R =4.55m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =7.0m (typical) @ V =-4.5V DS(ON)