NCEP40PT15D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP40PT15D
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1900 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
Тип корпуса: TO263
Аналог (замена) для NCEP40PT15D
NCEP40PT15D Datasheet (PDF)
ncep40pt15d.pdf

http://www.ncepower.com NCEP40PT15DNCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40pt15g.pdf

http://www.ncepower.com NCEP40PT15GNCE P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5VDS(ON) GS
ncep40pt13gu.pdf

http://www.ncepower.com NCEP40PT13GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.2m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.8m (typical) @ V =-4.5VDS(ON
ncep40pt13d.pdf

http://www.ncepower.com NCEP40PT13DNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.85m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =5.0m (typical) @ V =-4.5VDS(ON)
Другие MOSFET... NCEP3040Q , NCEP3090GU , NCEP30T12G , NCEP30T13GU , NCEP4040Q , NCEP4065QU , NCEP40P80D , NCEP40P80K , CS150N03A8 , NCEP40T11G , NCEP40T13GU , NCEP40T14G , NCEP40T15A , NCEP40T17A , NCEP6020AS , NCEP6080AG , NCEP6090 .
History: SMG2318N | SMG2398NE | SSM7811GM | CEP7030L | SSI1N50A | GT4953 | AOD2916
History: SMG2318N | SMG2398NE | SSM7811GM | CEP7030L | SSI1N50A | GT4953 | AOD2916



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