NCEP40PT15D Specs and Replacement
Type Designator: NCEP40PT15D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO263
NCEP40PT15D substitution
- MOSFET ⓘ Cross-Reference Search
NCEP40PT15D datasheet
ncep40pt15d.pdf
http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep40pt15g.pdf
http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS ... See More ⇒
ncep40pt13gu.pdf
http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON... See More ⇒
ncep40pt13d.pdf
http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)... See More ⇒
Detailed specifications: NCEP3040Q, NCEP3090GU, NCEP30T12G, NCEP30T13GU, NCEP4040Q, NCEP4065QU, NCEP40P80D, NCEP40P80K, IRF520, NCEP40T11G, NCEP40T13GU, NCEP40T14G, NCEP40T15A, NCEP40T17A, NCEP6020AS, NCEP6080AG, NCEP6090
Keywords - NCEP40PT15D MOSFET specs
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