2SK3572-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3572-Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 52 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.5 V
Carga de la puerta (Qg): 32 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 700 pF
Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
Paquete / Cubierta: TO263
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2SK3572-Z Datasheet (PDF)
2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3572SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3572 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3572 TO-220ABdesigned for low voltage high current applications such as2SK3572-S TO-262DC/DC converter with synchronous
2sk3572-z.pdf
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isc N-Channel MOSFET Transistor 2SK3572-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3572-zk.pdf
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isc N-Channel MOSFET Transistor 2SK3572-ZKFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3572-s.pdf
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isc N-Channel MOSFET Transistor 2SK3572-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3572.pdf
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SMD Type MOSFETMOS Field Effect Transistor2SK3572TO-263Unit: mm+0.24.57-0.2+0.1Features 1.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)+0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)2.541GateBuilt-in gate protection diode +0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2
2sk3572.pdf
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isc N-Channel MOSFET Transistor 2SK3572FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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