Справочник MOSFET. 2SK3572-Z

 

2SK3572-Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3572-Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 32 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 700 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3572-Z

 

 

2SK3572-Z Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3572SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3572 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3572 TO-220ABdesigned for low voltage high current applications such as2SK3572-S TO-262DC/DC converter with synchronous

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isc N-Channel MOSFET Transistor 2SK3572-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 0.1. Size:357K  inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3572-ZKFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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isc N-Channel MOSFET Transistor 2SK3572-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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2SK3572-Z

SMD Type MOSFETMOS Field Effect Transistor2SK3572TO-263Unit: mm+0.24.57-0.2+0.1Features 1.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)+0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)2.541GateBuilt-in gate protection diode +0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2

 7.2. Size:289K  inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3572FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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History: DMN6068SE

 

 
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