All MOSFET. 2SK3572-Z Datasheet

 

2SK3572-Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3572-Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO263

 2SK3572-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3572-Z Datasheet (PDF)

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 2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf

2SK3572-Z 2SK3572-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3572SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3572 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3572 TO-220ABdesigned for low voltage high current applications such as2SK3572-S TO-262DC/DC converter with synchronous

 ..2. Size:357K  inchange semiconductor
 2sk3572-z.pdf

2SK3572-Z 2SK3572-Z

isc N-Channel MOSFET Transistor 2SK3572-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 0.1. Size:357K  inchange semiconductor
 2sk3572-zk.pdf

2SK3572-Z 2SK3572-Z

isc N-Channel MOSFET Transistor 2SK3572-ZKFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 6.1. Size:283K  inchange semiconductor
 2sk3572-s.pdf

2SK3572-Z 2SK3572-Z

isc N-Channel MOSFET Transistor 2SK3572-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:45K  kexin
 2sk3572.pdf

2SK3572-Z

SMD Type MOSFETMOS Field Effect Transistor2SK3572TO-263Unit: mm+0.24.57-0.2+0.1Features 1.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)+0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)2.541GateBuilt-in gate protection diode +0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2

 7.2. Size:289K  inchange semiconductor
 2sk3572.pdf

2SK3572-Z 2SK3572-Z

isc N-Channel MOSFET Transistor 2SK3572FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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