FDD3672 Todos los transistores

March 2010 FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif

March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

FDD3672 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)

April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 22 A, 100 V. RDS(ON) = 64 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 71 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (28nC

February 2001 FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 25 A, 100 V. R = 46 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 51 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (38 nC typical) These

September 2002 FDD3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

FDD3690 100V N-Channel PowerTrench MOSFET Features General Description 22 A, 100 V. RDS(ON) = 64 m @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 71 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (28nC typical) The

FDD3680 100V N-Channel PowerTrench MOSFET Features General Description 25 A, 100 V. R = 46 m @ V = 10 V DS(ON) GS This N-Channel MOSFET has been designed R = 51 m @ V = 6 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (38 nC typical) switching PWM controllers. These MOSFETs featur

FDD3682-F085 Applications N-Channel PowerTrench MOSFET DC/DC converters and Off-Line UPS 100V, 32A, 36m Distributed Power Architectures and VRMs Features Primary Switch for 24V and 48V Systems rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A High Voltage Synchronous Rectifier Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Direct Injection / Die

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD3680 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

FDD3682 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDD3682 FEATURES Static drain-source on-resistance RDS(on) 36m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Converters and off-line UPS High Voltage Synchronous Rectifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE