March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

FDD3672www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)

April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 22 A, 100 V. RDS(ON) = 64 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 71 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (28nC

February 2001FDD3680100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 25 A, 100 V. R = 46 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DCR = 51 m @ V = 6 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (38 nC typical)These

September 2002FDD3682N-Channel PowerTrench MOSFET100V, 32A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

FDD3690 100V N-Channel PowerTrench MOSFET Features General Description 22 A, 100 V. RDS(ON) = 64 m @ VGS = 10 VThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 71 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (28nC typical)The

FDD3680100V N-Channel PowerTrench MOSFETFeaturesGeneral Description 25 A, 100 V. R = 46 m @ V = 10 VDS(ON) GSThis N-Channel MOSFET has been designedR = 51 m @ V = 6 VDS(ON) GSspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate charge (38 nC typical)switching PWM controllers.These MOSFETs featur

FDD3682-F085ApplicationsN-Channel PowerTrench MOSFET DC/DC converters and Off-Line UPS100V, 32A, 36m Distributed Power Architectures and VRMsFeatures Primary Switch for 24V and 48V Systems rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A High Voltage Synchronous Rectifier Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Direct Injection / Die

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD3680www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

FDD3682www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD3682FEATURESStatic drain-source on-resistance:RDS(on)36m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converters and off-line UPSHigh Voltage Synchronous RectifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE