STF140N6F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STF140N6F7
Código: 140N6F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 33 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 70 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 55 nC
Tiempo de subida (tr): 68 nS
Conductancia de drenaje-sustrato (Cd): 1520 pF
Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET STF140N6F7
STF140N6F7 Datasheet (PDF)
stf140n6f7.pdf
STF140N6F7 N-channel 60 V, 0.0031 typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N6F7 60 V 0.0035 70 A 33 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applica
stf140n8f7.pdf
STF140N8F7 N-channel 80 V, 3.5 m typ., 64 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N8F7 80 V 4.3 m 64 A 35 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Application
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
sti14nm65n stp14nm65n stw14nm65n stb14nm65n stf14nm65n.pdf
STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
stb14nm65n stb14nm65n stf14nm65n sti14nm65n stp14nm65n stw14nm65n stf14nm65n sti14nm65n stw14nm65n.pdf
STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V
stf14nm50n sti14nm50n stp14nm50n.pdf
STF14NM50N, STI14NM50N,STP14NM50NN-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETsin TO-220FP, IPAK and TO-220 packagesDatasheet - production dataFeatures VDS @ RDS(on) Order codes IDTJmax max3STF14NM50N21STI14NM50N 550 V 0.32 12 A TO-220FPSTP14NM50NTABTAB 100% avalanche tested Low input capacitance and gate charge33TO-220 2I
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C