All MOSFET. STF140N6F7 Datasheet

 

STF140N6F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STF140N6F7
   Marking Code: 140N6F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220F

 STF140N6F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STF140N6F7 Datasheet (PDF)

 ..1. Size:673K  st
 stf140n6f7.pdf

STF140N6F7 STF140N6F7

STF140N6F7 N-channel 60 V, 0.0031 typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N6F7 60 V 0.0035 70 A 33 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applica

 7.1. Size:585K  st
 stf140n8f7.pdf

STF140N6F7 STF140N6F7

STF140N8F7 N-channel 80 V, 3.5 m typ., 64 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N8F7 80 V 4.3 m 64 A 35 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Application

 9.1. Size:1281K  st
 stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf

STF140N6F7 STF140N6F7

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

 9.2. Size:548K  st
 sti14nm65n stp14nm65n stw14nm65n stb14nm65n stf14nm65n.pdf

STF140N6F7 STF140N6F7

STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V

 9.3. Size:1066K  st
 stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf

STF140N6F7 STF140N6F7

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

 9.4. Size:546K  st
 stb14nm65n stb14nm65n stf14nm65n sti14nm65n stp14nm65n stw14nm65n stf14nm65n sti14nm65n stw14nm65n.pdf

STF140N6F7 STF140N6F7

STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V

 9.5. Size:1269K  st
 stf14nm50n sti14nm50n stp14nm50n.pdf

STF140N6F7 STF140N6F7

STF14NM50N, STI14NM50N,STP14NM50NN-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETsin TO-220FP, IPAK and TO-220 packagesDatasheet - production dataFeatures VDS @ RDS(on) Order codes IDTJmax max3STF14NM50N21STI14NM50N 550 V 0.32 12 A TO-220FPSTP14NM50NTABTAB 100% avalanche tested Low input capacitance and gate charge33TO-220 2I

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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