STW26N60M2 Todos los transistores

 

STW26N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STW26N60M2
   Código: 26N60M2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 169 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 34 nC
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 88 pF
   Resistencia entre drenaje y fuente RDS(on): 0.165 Ohm
   Paquete / Cubierta: TO247

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STW26N60M2 Datasheet (PDF)

 ..1. Size:800K  st
stp26n60m2 stw26n60m2.pdf

STW26N60M2
STW26N60M2

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 8.1. Size:263K  st
stw26nm60.pdf

STW26N60M2
STW26N60M2

STW26NM60N-CHANNEL 600V - 0.125 - 30A TO-247MDmesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTW26NM60 600 V

 8.2. Size:1134K  st
stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf

STW26N60M2
STW26N60M2

STB26NM60N, STF26NM60NSTP26NM60N, STW26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) Type VDSS IDmax32312STB26NM60N 600 V

 8.3. Size:781K  st
stw26nm60n.pdf

STW26N60M2
STW26N60M2

STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) DSTW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 21Applications Switching applications TO-247Description Figure 1

 8.4. Size:562K  st
stw26nm50.pdf

STW26N60M2
STW26N60M2

STW26NM50N-channel 500 V, 0.10 , 30 A TO-247MDmesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW26NM50 500 V

 8.5. Size:1344K  st
stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf

STW26N60M2
STW26N60M2

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ Tjmax RDS(on) max ID31STB26NM60ND23D PAK21 STF26NM60ND650 V 0.175 21 ATO-220FPSTP26NM60NDTABSTW26NM60ND 100% avalanche tested3 32

 8.6. Size:261K  inchange semiconductor
stw26nm50.pdf

STW26N60M2
STW26N60M2

isc N-Channel MOSFET Transistor STW26NM50FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gat

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