STW26N60M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW26N60M2
Marking Code: 26N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 169 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO247
STW26N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW26N60M2 Datasheet (PDF)
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