SI3469DV Todos los transistores

 ..1. Size:185K  vishay
 si3469dv.pdf

Si3469DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET - 20 0.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC - Game Machine TSOP-6 - Desktop

 9.1. Size:242K  vishay
 si3460bdv.pdf

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica

 9.2. Size:211K  vishay
 si3460bd.pdf

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica

 9.3. Size:231K  vishay
 si3464dv.pdf

New Product Si3464DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.024 at VGS = 4.5 V TrenchFET Power MOSFET 8a 100 % Rg Tested 20 0.028 at VGS = 2.5 V 8a 11 nC Compliant to RoHS Directive 2002/95/EC 0.030 at VGS = 1.8 V 7.1 APPLICATIO

 9.4. Size:181K  vishay
 si3467dv.pdf

Si3467DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET - 20 0.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - PC - Game Machine TSOP-6 Top View 1 6 (4)

 9.5. Size:177K  vishay
 si3460dv.pdf

Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET 0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested 0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6

 9.6. Size:199K  vishay
 si3465dv.pdf

Si3465DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = - 10 V - 4.0 - 20 TrenchFET Power MOSFET 0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC - Game Machine TSOP-6 Top View (

 9.7. Size:612K  vishay
 si3460dd si3460ddv.pdf

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET 20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested 0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/EC APPL

 9.8. Size:612K  vishay
 si3460ddv.pdf

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET 20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested 0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/EC APPL

 9.9. Size:862K  cn vbsemi
 si3460dv-t1.pdf

SI3460DV-T1 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/