SI3469DV PDF and Equivalents Search

 

SI3469DV Specs and Replacement

Type Designator: SI3469DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSOP-6

SI3469DV substitution

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SI3469DV datasheet

 ..1. Size:185K  vishay
si3469dv.pdf pdf_icon

SI3469DV

Si3469DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET - 20 0.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC - Game Machine TSOP-6 - Desktop... See More ⇒

 9.1. Size:242K  vishay
si3460bdv.pdf pdf_icon

SI3469DV

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica... See More ⇒

 9.2. Size:211K  vishay
si3460bd.pdf pdf_icon

SI3469DV

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica... See More ⇒

 9.3. Size:231K  vishay
si3464dv.pdf pdf_icon

SI3469DV

New Product Si3464DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.024 at VGS = 4.5 V TrenchFET Power MOSFET 8a 100 % Rg Tested 20 0.028 at VGS = 2.5 V 8a 11 nC Compliant to RoHS Directive 2002/95/EC 0.030 at VGS = 1.8 V 7.1 APPLICATIO... See More ⇒

Detailed specifications: SI1016X, SI1024X, SI1078X, SI1900DL, SI1902DL, SI2308CDS, SI3440ADV, SI3460BDV, K4145, SI3493DDV, SI3993DV, SI4058DY, SI4062DY, SI4403DDY, SI4431BDY, SI4435FDY, SI4447DY

Keywords - SI3469DV MOSFET specs

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