SI4850BDY Todos los transistores

 ..1. Size:289K  vishay
 si4850bdy.pdf

Si4850BDY www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV power MOSFET D 5 D 6 100 % Rg and UIS tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 Synchronous rectification S S 2 2 S S 1 1 Primary side switch S

 8.1. Size:243K  vishay
 si4850ey.pdf

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7

 8.2. Size:246K  vishay
 si4850ey-t1 si4850ey.pdf

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7

 8.3. Size:852K  cn vbsemi
 si4850dy-t1.pdf

SI4850DY-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF