All MOSFET. SI4850BDY Datasheet

 

SI4850BDY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4850BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.1 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: SO-8

 SI4850BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4850BDY Datasheet (PDF)

 ..1. Size:289K  vishay
si4850bdy.pdf

SI4850BDY
SI4850BDY

Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS

 8.1. Size:243K  vishay
si4850ey.pdf

SI4850BDY
SI4850BDY

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

 8.2. Size:246K  vishay
si4850ey-t1 si4850ey.pdf

SI4850BDY
SI4850BDY

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

 8.3. Size:852K  cn vbsemi
si4850dy-t1.pdf

SI4850BDY
SI4850BDY

SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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