All MOSFET. SI4850BDY Datasheet

 

SI4850BDY Datasheet and Replacement


   Type Designator: SI4850BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: SO-8
 

 SI4850BDY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI4850BDY Datasheet (PDF)

 ..1. Size:289K  vishay
 si4850bdy.pdf pdf_icon

SI4850BDY

Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS

 8.1. Size:243K  vishay
 si4850ey.pdf pdf_icon

SI4850BDY

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

 8.2. Size:246K  vishay
 si4850ey-t1 si4850ey.pdf pdf_icon

SI4850BDY

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

 8.3. Size:852K  cn vbsemi
 si4850dy-t1.pdf pdf_icon

SI4850BDY

SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF

SHOW MORE

Datasheet: SI4058DY , SI4062DY , SI4403DDY , SI4431BDY , SI4435FDY , SI4447DY , SI4804CDY , SI4848ADY , IRFP250 , SI4925BDY , SI4936ADY , SI4946CDY , SI4966DY , SI5948DU , SI7113ADN , SI7153DN , SI7218DN .

History: TJ100F04M3L

Keywords - SI4850BDY MOSFET datasheet

 SI4850BDY cross reference
 SI4850BDY equivalent finder
 SI4850BDY lookup
 SI4850BDY substitution
 SI4850BDY replacement

 

 
Back to Top

 


 
.