SI4850BDY PDF and Equivalents Search

 

SI4850BDY Specs and Replacement

Type Designator: SI4850BDY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: SO-8

SI4850BDY substitution

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SI4850BDY datasheet

 ..1. Size:289K  vishay
si4850bdy.pdf pdf_icon

SI4850BDY

Si4850BDY www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV power MOSFET D 5 D 6 100 % Rg and UIS tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 Synchronous rectification S S 2 2 S S 1 1 Primary side switch S ... See More ⇒

 8.1. Size:243K  vishay
si4850ey.pdf pdf_icon

SI4850BDY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

 8.2. Size:246K  vishay
si4850ey-t1 si4850ey.pdf pdf_icon

SI4850BDY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

 8.3. Size:852K  cn vbsemi
si4850dy-t1.pdf pdf_icon

SI4850BDY

SI4850DY-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF... See More ⇒

Detailed specifications: SI4058DY, SI4062DY, SI4403DDY, SI4431BDY, SI4435FDY, SI4447DY, SI4804CDY, SI4848ADY, AON7506, SI4925BDY, SI4936ADY, SI4946CDY, SI4966DY, SI5948DU, SI7113ADN, SI7153DN, SI7218DN

Keywords - SI4850BDY MOSFET specs

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