SI4936ADY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4936ADY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 13 nC
trⓘ - Tiempo de subida: 14 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SI4936ADY
SI4936ADY Datasheet (PDF)
si4936ady.pdf
Si4936ADYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET300.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/ECSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4 D25 G1 G2Top ViewS1 S2
si4936ad.pdf
Si4936ADYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET300.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/ECSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4 D25 G1 G2Top ViewS1 S2
si4936cd.pdf
New ProductSi4936CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V TrenchFET Power MOSFET5.830 2.8 nC0.050 at VGS = 4.5 V 5.5APPLICATIONS Low Current DC/DC Conversion Notebook System PowerSO-8 D1D2S1 D1
si4936bd.pdf
Si4936BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = 10 V 6.9 TrenchFET Power MOSFET30 4.5 nC Compliant to RoHS Directive 2002/95/EC0.051 at VGS = 4.5 V 5.7APPLICATIONS Low Current DC/DC Conversion Notebook Syste
si4936dy.pdf
Si4936DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS AvailableCompliant0.037 @ VGS = 10 V 5.830300.055 @ VGS = 4.5 V 4.7D1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETOrdering Information:
si4936cdy.pdf
New ProductSi4936CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V TrenchFET Power MOSFET5.830 2.8 nC0.050 at VGS = 4.5 V 5.5APPLICATIONS Low Current DC/DC Conversion Notebook System PowerSO-8 D1D2S1 D1
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
