SI4936ADY MOSFET Datasheet: N-Ch, 30V, 4.4A. Full specification with pinout and replacement list

SI4936ADY Specs and Replacement

Type Designator: SI4936ADY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SO-8

SI4936ADY substitution

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SI4936ADY datasheet

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Si4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET 30 0.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 G1 G2 Top View S1 S2 ... See More ⇒

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New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1 ... See More ⇒

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Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = 10 V 6.9 TrenchFET Power MOSFET 30 4.5 nC Compliant to RoHS Directive 2002/95/EC 0.051 at VGS = 4.5 V 5.7 APPLICATIONS Low Current DC/DC Conversion Notebook Syste... See More ⇒