SIA468DJ Todos los transistores

 ..1. Size:963K  vishay
 sia468dj.pdf

SiA468DJ www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) (MAX.) ID (A) a Qg (TYP.) 100 % Rg tested 0.0084 at VGS = 10 V 37.8 30 8.2 nC The highest continuous drain current capability 0.0114 at VGS = 4.5 V 32.5 in its class Very low RDS-Qg FOM and Qgd elevate efficiency Powe

 9.1. Size:185K  vishay
 sia469dj.pdf

SiA469DJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SC-70-6L Single D TrenchFET Gen III p-channel power MOSFET D 6 Thermally enhanced PowerPAK SC-70 package S 5 4 100% Rg tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S 1 7 2 D APPLICATIONS 3 D S 1 G Load

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 sia465edj.pdf

 9.3. Size:251K  vishay
 sia466edj.pdf

SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0095 at VGS = 10 V 25 - Small footprint area 20 0.0111 at VGS = 6 V 25 6.3 nC - Low on-resistance 0.0130 at VGS = 4.5 V 25 Typical ESD protection 2500 V (HBM)

 9.4. Size:198K  vishay
 sia462dj.pdf

New Product SiA462DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.020 at VGS = 6 V 30 12 5 nC www.vishay.com/doc?99912 0.022 at VGS = 4.5 V 12 APPLICATIONS

 9.5. Size:225K  vishay
 sia461dj.pdf

New Product SiA461DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. Thermally Enhanced PowerPAK SC-70 Package ID (A)a Qg (Typ.) - Small Footprint Area 0.033 at VGS = - 4.5 V - 12 - Low On-Resistance Material categorization 0.042 at VGS = - 2.5 V - 12 18 nC - 20 For definitions of complia