SIA468DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIA468DJ
Маркировка: AX
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 19 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 37.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17.6 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 435 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0084 Ohm
Тип корпуса: SOT-363 SC-70-6
SIA468DJ Datasheet (PDF)
sia468dj.pdf
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SiA468DJwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a Qg (TYP.) 100 % Rg tested0.0084 at VGS = 10 V 37.830 8.2 nC The highest continuous drain current capability 0.0114 at VGS = 4.5 V 32.5in its class Very low RDS-Qg FOM and Qgd elevate efficiencyPowe
sia469dj.pdf
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SiA469DJwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SC-70-6L SingleD TrenchFET Gen III p-channel power MOSFETD 6 Thermally enhanced PowerPAK SC-70 packageS 54 100% Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912S172 DAPPLICATIONS3 D S1G Load
sia465edj.pdf
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SiA465EDJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0165 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 23 nC- Low on-resistance0.0300 at VGS = -2.5 V -12 a 100 % Rg tested
sia466edj.pdf
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SiA466EDJwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0095 at VGS = 10 V 25- Small footprint area20 0.0111 at VGS = 6 V 25 6.3 nC- Low on-resistance0.0130 at VGS = 4.5 V 25 Typical ESD protection: 2500 V (HBM)
sia462dj.pdf
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New Product SiA462DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:12For definitions of compliance please see0.020 at VGS = 6 V 30 12 5 nCwww.vishay.com/doc?999120.022 at VGS = 4.5 V 12APPLICATIONS
sia461dj.pdf
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New ProductSiA461DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Thermally Enhanced PowerPAK SC-70 PackageID (A)a Qg (Typ.)- Small Footprint Area0.033 at VGS = - 4.5 V - 12- Low On-Resistance Material categorization: 0.042 at VGS = - 2.5 V - 12 18 nC- 20For definitions of complia
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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![SIA468DJ](https://alltransistors.com/images/es.png)
![SIA468DJ](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C