SIA468DJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA468DJ
Marking Code: AX
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 19
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 37.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.6
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 435
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package:
SOT-363
SC-70-6
SIA468DJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA468DJ
Datasheet (PDF)
..1. Size:963K vishay
sia468dj.pdf
SiA468DJwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a Qg (TYP.) 100 % Rg tested0.0084 at VGS = 10 V 37.830 8.2 nC The highest continuous drain current capability 0.0114 at VGS = 4.5 V 32.5in its class Very low RDS-Qg FOM and Qgd elevate efficiencyPowe
9.1. Size:185K vishay
sia469dj.pdf
SiA469DJwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SC-70-6L SingleD TrenchFET Gen III p-channel power MOSFETD 6 Thermally enhanced PowerPAK SC-70 packageS 54 100% Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912S172 DAPPLICATIONS3 D S1G Load
9.2. Size:251K vishay
sia465edj.pdf
SiA465EDJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0165 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 23 nC- Low on-resistance0.0300 at VGS = -2.5 V -12 a 100 % Rg tested
9.3. Size:251K vishay
sia466edj.pdf
SiA466EDJwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0095 at VGS = 10 V 25- Small footprint area20 0.0111 at VGS = 6 V 25 6.3 nC- Low on-resistance0.0130 at VGS = 4.5 V 25 Typical ESD protection: 2500 V (HBM)
9.4. Size:198K vishay
sia462dj.pdf
New Product SiA462DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:12For definitions of compliance please see0.020 at VGS = 6 V 30 12 5 nCwww.vishay.com/doc?999120.022 at VGS = 4.5 V 12APPLICATIONS
9.5. Size:225K vishay
sia461dj.pdf
New ProductSiA461DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Thermally Enhanced PowerPAK SC-70 PackageID (A)a Qg (Typ.)- Small Footprint Area0.033 at VGS = - 4.5 V - 12- Low On-Resistance Material categorization: 0.042 at VGS = - 2.5 V - 12 18 nC- 20For definitions of complia
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