FDD5614P Todos los transistores

 

FDD5614P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5614P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 15 nC

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD5614P Datasheet (PDF)

1.1. fdd5614p.pdf Size:101K _fairchild_semi

FDD5614P
FDD5614P

 May 2005 FDD5614P 60V P-Channel PowerTrench® MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 mΩ @ VGS = –4.5 V for power management applications. • Fast switching speed Applications • High performance tren

4.1. fdd5612.pdf Size:80K _fairchild_semi

FDD5614P
FDD5614P

March 2001 FDD5612    60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • 18 A, 60 V. RDS(ON) = 55 mΩ @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 mΩ @ VGS = 6 V These MOSFETs feature fas

 5.1. fdd5680.pdf Size:91K _fairchild_semi

FDD5614P
FDD5614P

July 2000 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V Semiconductor's advanced PowerTrench process that has RDS(on) = 0.025 Ω @ VGS = 6 V. been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior • Low gate

5.2. fdd5690.pdf Size:170K _fairchild_semi

FDD5614P
FDD5614P

December 2002 FDD5690 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 Ω @ VGS = 6 V. either synchronous or conventional switching PWM controllers. • Low gate charge (23nC typical). These

 5.3. fdd5670.pdf Size:213K _fairchild_semi

FDD5614P
FDD5614P

December 2009 FDD5670    60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low

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