FDD5614P Todos los transistores

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor s 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V high voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance trench tech

FDD5614P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

December 2009 FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low

December 2002 FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (23nC typical). These

July 2000 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 V Semiconductor's advanced PowerTrench process that has RDS(on) = 0.025 @ VGS = 6 V. been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior Low gate

FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate

FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (23nC typical). These MOSFETs feature

FDD5670 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Un