May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductors 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 Vhigh voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speedApplications High performance trench tech

FDD5614Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designedFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

December 2009FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

December 2002FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These

July 2000FDD5680N-Channel, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 VSemiconductor's advanced PowerTrench process that hasRDS(on) = 0.025 @ VGS = 6 V.been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for superior Low gate

FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow gate

FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These MOSFETs feature

FDD5670www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Un