All MOSFET. FDD5614P Datasheet

 

FDD5614P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD5614P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO252 DPAK

FDD5614P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD5614P Datasheet (PDF)

0.1. fdd5614p.pdf Size:101K _fairchild_semi

FDD5614P
FDD5614P

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

8.1. fdd5612.pdf Size:80K _fairchild_semi

FDD5614P
FDD5614P

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designedFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

 9.1. fdd5680.pdf Size:91K _fairchild_semi

FDD5614P
FDD5614P

July 2000FDD5680N-Channel, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 VSemiconductor's advanced PowerTrench process that hasRDS(on) = 0.025 @ VGS = 6 V.been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for superior Low gate

9.2. fdd5690.pdf Size:170K _fairchild_semi

FDD5614P
FDD5614P

December 2002FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These

 9.3. fdd5670.pdf Size:213K _fairchild_semi

FDD5614P
FDD5614P

December 2009FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

Datasheet: FDD4141 , FDD4141_F085 , FDD4243 , FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , 2SK117 , FDD5670 , FDD5810_F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 .

 

 
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