All MOSFET. FDD5614P Datasheet

 

FDD5614P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD5614P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO252, DPAK

FDD5614P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD5614P Datasheet (PDF)

0.1. fdd5614p.pdf Size:101K _fairchild_semi

FDD5614P FDD5614P

 May 2005 FDD5614P 60V P-Channel PowerTrench® MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 mΩ @ VGS = –4.5 V for power management applications. • Fast switching speed Applications • High performance tren

8.1. fdd5612.pdf Size:80K _fairchild_semi

FDD5614P FDD5614P

March 2001 FDD5612    60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • 18 A, 60 V. RDS(ON) = 55 mΩ @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 mΩ @ VGS = 6 V These MOSFETs feature fas

 9.1. fdd5680.pdf Size:91K _fairchild_semi

FDD5614P FDD5614P

July 2000 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V Semiconductor's advanced PowerTrench process that has RDS(on) = 0.025 Ω @ VGS = 6 V. been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior • Low gate

9.2. fdd5690.pdf Size:170K _fairchild_semi

FDD5614P FDD5614P

December 2002 FDD5690 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 Ω @ VGS = 6 V. either synchronous or conventional switching PWM controllers. • Low gate charge (23nC typical). These

 9.3. fdd5670.pdf Size:213K _fairchild_semi

FDD5614P FDD5614P

December 2009 FDD5670    60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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