SQJ409EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQJ409EP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 170 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 620 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: SO-8

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SQJ409EP Datasheet (PDF)

..1. Size:236K vishay
sqj409ep.pdf

SQJ409EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1www.vishay.com/doc?99912S2S3S4S1 GTop View Bottom ViewGPRODUCT SUMMARYVDS (V) -4

9.1. Size:179K vishay
sqj403eep.pdf

SQJ403EEPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.0200 100 % Rg and UIS TestedID (A) - 30a Material categorization:Configuration SingleFor d

9.2. Size:186K vishay
sqj402ep.pdf

SQJ402EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 100 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0110 Material categorization:RDS(on) () at VGS = 4.5 V 0.0140For definitions of compliance please seeID (A) 32www.vishay.com/doc?99912

9.3. Size:205K vishay
sqj403ep.pdf

SQJ403EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization:ID (A) -30 afor definitions of compliance please see Configuration S

9.4. Size:233K vishay
sqj407ep.pdf

SQJ407EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4S1 GTop View Bottom ViewGPRODUCT SUMMARYVDS (V) -30RD

9.5. Size:175K vishay
sqj401ep.pdf

SQJ401EPwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.0060 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.0080 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compl

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