All MOSFET. SQJ409EP Datasheet

 

SQJ409EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ409EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8

 SQJ409EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ409EP Datasheet (PDF)

 ..1. Size:236K  vishay
 sqj409ep.pdf

SQJ409EP SQJ409EP

SQJ409EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1www.vishay.com/doc?99912S2S3S4S1 GTop View Bottom ViewGPRODUCT SUMMARYVDS (V) -4

 9.1. Size:179K  vishay
 sqj403eep.pdf

SQJ409EP SQJ409EP

SQJ403EEPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.0200 100 % Rg and UIS TestedID (A) - 30a Material categorization:Configuration SingleFor d

 9.2. Size:186K  vishay
 sqj402ep.pdf

SQJ409EP SQJ409EP

SQJ402EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 100 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0110 Material categorization:RDS(on) () at VGS = 4.5 V 0.0140For definitions of compliance please seeID (A) 32www.vishay.com/doc?99912

 9.3. Size:205K  vishay
 sqj403ep.pdf

SQJ409EP SQJ409EP

SQJ403EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization:ID (A) -30 afor definitions of compliance please see Configuration S

 9.4. Size:233K  vishay
 sqj407ep.pdf

SQJ409EP SQJ409EP

SQJ407EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4S1 GTop View Bottom ViewGPRODUCT SUMMARYVDS (V) -30RD

 9.5. Size:175K  vishay
 sqj401ep.pdf

SQJ409EP SQJ409EP

SQJ401EPwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.0060 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.0080 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compl

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