FDD5N53 Todos los transistores

 

FDD5N53 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N53

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente |Vds|: 530 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: TO252 DPAK

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FDD5N53 Datasheet (PDF)

0.1. fdd5n53 fdu5n53.pdf Size:244K _fairchild_semi

FDD5N53
FDD5N53

January 2009UniFETTMFDD5N53/FDU5N53tmN-Channel MOSFET 530V, 4A, 1.5Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been espe

8.1. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N53
FDD5N53

December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has

8.2. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N53
FDD5N53

November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially

 8.3. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N53
FDD5N53

December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall

8.4. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N53
FDD5N53

November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp

 8.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N53
FDD5N53

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h

Otros transistores... FDD5614P , FDD5670 , FDD5810_F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , APT50M38JFLL , FDD6530A , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637_F085 , FDD6680AS , STT03N10 .

 

 
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