Справочник MOSFET. FDD5N53

 

FDD5N53 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD5N53

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 40 W

Предельно допустимое напряжение сток-исток (Uds): 530 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm

Тип корпуса: TO252, DPAK

Аналог (замена) для FDD5N53

 

 

FDD5N53 Datasheet (PDF)

1.1. fdd5n53 fdu5n53.pdf Size:244K _fairchild_semi

FDD5N53 FDD5N53

January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been espe

4.1. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N53 FDD5N53

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has

4.2. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N53 FDD5N53

November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS(on) = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been especially

 4.3. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N53 FDD5N53

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been especiall

4.4. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N53 FDD5N53

November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been esp

 4.5. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N53 FDD5N53

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 11nC) DOMS technology. • Low Crss ( Typ. 5pF) This advance technology h

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