FDD5N53 datasheet, аналоги, основные параметры

Наименование производителя: FDD5N53  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 530 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD5N53

- подборⓘ MOSFET транзистора по параметрам

 

FDD5N53 даташит

 ..1. Size:244K  fairchild semi
fdd5n53 fdu5n53.pdfpdf_icon

FDD5N53

January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been espe

 8.1. Size:645K  fairchild semi
fdd5n50u.pdfpdf_icon

FDD5N53

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology h

 8.2. Size:752K  fairchild semi
fdd5n50f.pdfpdf_icon

FDD5N53

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has

 8.3. Size:503K  fairchild semi
fdd5n50.pdfpdf_icon

FDD5N53

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4 Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especiall

Другие IGBT... FDD5614P, FDD5670, FDD5810F085, FDD5N50, FDD5N50F, FDD5N50NZ, FDD5N50NZF, FDD5N50U, AOD4184A, FDD6530A, FDD6630A, STT03N20, FDD6635, FDD6637, FDD6637F085, FDD6680AS, STT03N10