FDD5N53 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD5N53
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 530 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO252, DPAK
FDD5N53 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD5N53 Datasheet (PDF)
0.1. fdd5n53 fdu5n53.pdf 
Size:244K _fairchild_semi
January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been espe
8.1. fdd5n50f.pdf Size:752K _fairchild_semi
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has
8.2. fdd5n50nz.pdf Size:548K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS(on) = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been especially
8.3. fdd5n50.pdf Size:503K _fairchild_semi
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been especiall
8.4. fdd5n50nzf.pdf Size:564K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been esp
8.5. fdd5n50u.pdf Size:645K _fairchild_semi
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 11nC) DOMS technology. • Low Crss ( Typ. 5pF) This advance technology h
Datasheet: FDD5614P , FDD5670 , FDD5810_F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , APT50M38JFLL , FDD6530A , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637_F085 , FDD6680AS , STT03N10 .
