FDD5N53 PDF and Equivalents Search

 

FDD5N53 Specs and Replacement

Type Designator: FDD5N53

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 530 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO252 DPAK

FDD5N53 substitution

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FDD5N53 datasheet

 ..1. Size:244K  fairchild semi
fdd5n53 fdu5n53.pdf pdf_icon

FDD5N53

January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been espe... See More ⇒

 8.1. Size:645K  fairchild semi
fdd5n50u.pdf pdf_icon

FDD5N53

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology h... See More ⇒

 8.2. Size:752K  fairchild semi
fdd5n50f.pdf pdf_icon

FDD5N53

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has ... See More ⇒

 8.3. Size:503K  fairchild semi
fdd5n50.pdf pdf_icon

FDD5N53

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4 Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especiall... See More ⇒

Detailed specifications: FDD5614P , FDD5670 , FDD5810F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , IRF730 , FDD6530A , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 .

Keywords - FDD5N53 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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