FDD6530A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD6530A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: TO252 DPAK

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FDD6530A Datasheet (PDF)

..1. Size:82K fairchild semi
fdd6530a.pdf

July 2001FDD6530A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate char

..2. Size:337K onsemi
fdd6530a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:308K inchange semiconductor
fdd6530a.pdf

isc N-Channel MOSFET Transistor FDD6530AFEATURESDrain Current : I =21A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =32m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

9.1. Size:68K fairchild semi
fdd6512a fdu6512a.pdf

November 2001FDD6512A/FDU6512A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

9.2. Size:307K inchange semiconductor
fdd6512a.pdf

isc N-Channel MOSFET Transistor FDD6512AFEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... FDD5670 , FDD5810F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , IRFZ44N , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 .

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