All MOSFET. FDD6530A Datasheet

 

FDD6530A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD6530A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252 DPAK

 FDD6530A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6530A Datasheet (PDF)

 ..1. Size:82K  fairchild semi
 fdd6530a.pdf

FDD6530A FDD6530A

July 2001FDD6530A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate char

 ..2. Size:337K  onsemi
 fdd6530a.pdf

FDD6530A FDD6530A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:308K  inchange semiconductor
 fdd6530a.pdf

FDD6530A FDD6530A

isc N-Channel MOSFET Transistor FDD6530AFEATURESDrain Current : I =21A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =32m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

 9.1. Size:68K  fairchild semi
 fdd6512a fdu6512a.pdf

FDD6530A FDD6530A

November 2001FDD6512A/FDU6512A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

 9.2. Size:307K  inchange semiconductor
 fdd6512a.pdf

FDD6530A FDD6530A

isc N-Channel MOSFET Transistor FDD6512AFEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FRF9150H

 

 
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