FDD6530A datasheet, аналоги, основные параметры

Наименование производителя: FDD6530A  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 33 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD6530A

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FDD6530A даташит

 ..1. Size:82K  fairchild semi
fdd6530a.pdfpdf_icon

FDD6530A

July 2001 FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate char

 ..2. Size:337K  onsemi
fdd6530a.pdfpdf_icon

FDD6530A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:308K  inchange semiconductor
fdd6530a.pdfpdf_icon

FDD6530A

isc N-Channel MOSFET Transistor FDD6530A FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =32m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.1. Size:68K  fairchild semi
fdd6512a fdu6512a.pdfpdf_icon

FDD6530A

November 2001 FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Другие IGBT... FDD5670, FDD5810F085, FDD5N50, FDD5N50F, FDD5N50NZ, FDD5N50NZF, FDD5N50U, FDD5N53, IRF3205, FDD6630A, STT03N20, FDD6635, FDD6637, FDD6637F085, FDD6680AS, STT03N10, FDD6685