FDD6530A - описание и поиск аналогов

July 2001 FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate char

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDD6530A FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =32m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

November 2001 FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

isc N-Channel MOSFET Transistor FDD6512A FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =21m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d