SQM50028EM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQM50028EM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 375 W

Voltaje máximo drenador - fuente |Vds|: 60 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 120 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V

Carga de la puerta (Qg): 123 nC

Tiempo de subida (tr): 26 nS

Conductancia de drenaje-sustrato (Cd): 3550 pF

Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm

Paquete / Cubierta: TO-263-7

Búsqueda de reemplazo de MOSFET SQM50028EM

SQM50028EM Datasheet (PDF)

..1. Size:165K vishay
sqm50028em.pdf

SQM50028EMwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESTO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please seeSSDD www.vishay.com/doc?99912GGDTop ViewPRODUCT SUMMARYVDS (V) 6

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sqm50020el.pdf

SQM50020ELwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0020 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.0025 100 % Rg and UIS testedID (A) 120Configuration Single Material categorization:for d

9.1. Size:168K vishay
sqm50n04-5m0.pdf

SQM50N04-5m0www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.005 100 % Rg and UIS TestedID (A) 50 AEC-Q101 QualifieddConfiguration Single Material categorization: For definitions of TO-263 compliance p

9.2. Size:165K vishay
sqm50n04-4m0l.pdf

SQM50N04-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0040 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Singl

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sqm50p04-09l.pdf

SQM50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0170 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuratio

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sqm50n04-4m1.pdf

SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

9.5. Size:168K vishay
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SQM50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0070 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0110 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

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SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

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SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

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