All MOSFET. SQM50028EM Datasheet

 

SQM50028EM Datasheet and Replacement


   Type Designator: SQM50028EM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 3550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-263-7
 

 SQM50028EM substitution

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SQM50028EM Datasheet (PDF)

 ..1. Size:165K  vishay
sqm50028em.pdf pdf_icon

SQM50028EM

SQM50028EMwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESTO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please seeSSDD www.vishay.com/doc?99912GGDTop ViewPRODUCT SUMMARYVDS (V) 6

 7.1. Size:185K  vishay
sqm50020el.pdf pdf_icon

SQM50028EM

SQM50020ELwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0020 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.0025 100 % Rg and UIS testedID (A) 120Configuration Single Material categorization:for d

 9.1. Size:169K  vishay
sqm50p08-25l.pdf pdf_icon

SQM50028EM

SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 9.2. Size:169K  vishay
sqm50p06-15l.pdf pdf_icon

SQM50028EM

SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

Datasheet: SQJB00EP , SQJB40EP , SQJB42EP , SQJB60EP , SQJB68EP , SQJB70EP , SQJB80EP , SQJB90EP , IRF540 , SQM90142E , SQP90142E , SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW , SUD08P06-155L-GE3 .

History: AM3932N | RJK005N03T146 | GP1M016A060N | 2SJ552S | FTA14N50C | AUIRFB3077 | LP2307LT1G

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