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SQM50028EM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SQM50028EM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 3550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO-263-7

 Аналог (замена) для SQM50028EM

 

 

SQM50028EM Datasheet (PDF)

 ..1. Size:165K  vishay
 sqm50028em.pdf

SQM50028EM SQM50028EM

SQM50028EMwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESTO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please seeSSDD www.vishay.com/doc?99912GGDTop ViewPRODUCT SUMMARYVDS (V) 6

 7.1. Size:185K  vishay
 sqm50020el.pdf

SQM50028EM SQM50028EM

SQM50020ELwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0020 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.0025 100 % Rg and UIS testedID (A) 120Configuration Single Material categorization:for d

 9.1. Size:169K  vishay
 sqm50p08-25l.pdf

SQM50028EM SQM50028EM

SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 9.2. Size:169K  vishay
 sqm50p06-15l.pdf

SQM50028EM SQM50028EM

SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 9.3. Size:168K  vishay
 sqm50p03-07.pdf

SQM50028EM SQM50028EM

SQM50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0070 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0110 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

 9.4. Size:165K  vishay
 sqm50n04-4m0l.pdf

SQM50028EM SQM50028EM

SQM50N04-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0040 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Singl

 9.5. Size:173K  vishay
 sqm50n04-4m1.pdf

SQM50028EM SQM50028EM

SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 9.6. Size:154K  vishay
 sqm50p04-09l.pdf

SQM50028EM SQM50028EM

SQM50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0170 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuratio

 9.7. Size:168K  vishay
 sqm50n04-5m0.pdf

SQM50028EM SQM50028EM

SQM50N04-5m0www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.005 100 % Rg and UIS TestedID (A) 50 AEC-Q101 QualifieddConfiguration Single Material categorization: For definitions of TO-263 compliance p

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