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SQM50028EM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SQM50028EM

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 375 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3.5 V

Максимально допустимый постоянный ток стока |Id|: 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 123 nC

Время нарастания (tr): 26 ns

Выходная емкость (Cd): 3550 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.002 Ohm

Тип корпуса: TO-263-7

Аналог (замена) для SQM50028EM

 

 

SQM50028EM Datasheet (PDF)

..1. sqm50028em.pdf Size:165K _vishay

SQM50028EM
SQM50028EM

SQM50028EMwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESTO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please seeSSDD www.vishay.com/doc?99912GGDTop ViewPRODUCT SUMMARYVDS (V) 6

7.1. sqm50020el.pdf Size:185K _vishay

SQM50028EM
SQM50028EM

SQM50020ELwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0020 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.0025 100 % Rg and UIS testedID (A) 120Configuration Single Material categorization:for d

9.1. sqm50n04-5m0.pdf Size:168K _vishay

SQM50028EM
SQM50028EM

SQM50N04-5m0www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.005 100 % Rg and UIS TestedID (A) 50 AEC-Q101 QualifieddConfiguration Single Material categorization: For definitions of TO-263 compliance p

9.2. sqm50n04-4m0l.pdf Size:165K _vishay

SQM50028EM
SQM50028EM

SQM50N04-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0040 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Singl

 9.3. sqm50p04-09l.pdf Size:154K _vishay

SQM50028EM
SQM50028EM

SQM50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0170 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuratio

9.4. sqm50n04-4m1.pdf Size:173K _vishay

SQM50028EM
SQM50028EM

SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 9.5. sqm50p03-07.pdf Size:168K _vishay

SQM50028EM
SQM50028EM

SQM50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0070 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0110 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

9.6. sqm50p06-15l.pdf Size:169K _vishay

SQM50028EM
SQM50028EM

SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

9.7. sqm50p08-25l.pdf Size:169K _vishay

SQM50028EM
SQM50028EM

SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

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